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SUP85N03-04P-E3 - 

MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.0035Ohm; ID 85A; TO-220AB; PD 166W; VGS +/-20V

Siliconix / Vishay SUP85N03-04P-E3
聲明：圖片僅供參考，請以實(shí)物為準(zhǔn)！
制造商產(chǎn)品編號：
SUP85N03-04P-E3
倉庫庫存編號：
70026134
技術(shù)數(shù)據(jù)表：
View SUP85N03-04P-E3 Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
由于產(chǎn)品數(shù)據(jù)庫龐大，部分產(chǎn)品信息可能未能及時(shí)更新，下單前請與銷售人員確認(rèn)好實(shí)時(shí)在庫數(shù)量，謝謝合作！
  美国1号仓库    仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货
型号 制造商 描述 实时库存 起订量 实时单价
(含税)		 货期
(工作日)		 操作
SUP85N03-04P-E3
库存编号:SUP85N03-04P-E3-ND		 Vishay Siliconix MOSFET N-CH 30V 85A TO220AB0
起订		询价需咨询 询价
查看资料
  英国8号仓库    仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货
型号 制造商 描述 实时库存 起订量 实时单价
(含税)		 货期
(工作日)		 操作
SUP85N03-04P-E3 Vishay Intertechnologies  
24
1起订		1+
6+
17+
￥117.62
￥86.26
￥78.42
购买1-3周 购买
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SUP85N03-04P-E3產(chǎn)品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

    • SUP85N03-04P-E3產(chǎn)品信息

      Brand/Series  SUP Series  
      Capacitance, Input  4500 pF @ 25 V  
      Channel Mode  Enhancement  
      Channel Type  N  
      Configuration  Single  
      Current, Drain  85 A  
      Dimensions  10.51 x 4.65 x 15.49 mm  
      Fall Time  35 ns  
      Gate Charge, Total  90 nC  
      Height  0.61" (15.49mm)  
      Length  0.413" (10.51mm)  
      Mounting Type  Through Hole  
      Number of Elements per Chip  1  
      Number of Pins  3  
      Operating and Storage Temperature  –55 to +175 °C  
      Package Type  TO-220AB  
      Polarization  N-Channel  
      Power Dissipation  166 W  
      Resistance, Drain to Source On  0.008 Ω  
      Resistance, Thermal, Junction to Case  0.9 °C/W  
      Temperature, Operating, Maximum  +175 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +175 °C  
      Thermal Resistance, Junction to Ambient  40 °C/W  
      Time, Turn-Off Delay  50 ns  
      Time, Turn-On Delay  15 ns  
      Transconductance, Forward  30 S  
      Typical Gate Charge @ Vgs  71 nC @ 10 V  
      Voltage, Breakdown, Drain to Source  30 V  
      Voltage, Drain to Source  30 V  
      Voltage, Forward, Diode  1.5 V  
      Voltage, Gate to Source  ±20 V  
      Width  0.183" (4.65mm)  
    關(guān)鍵詞         

    SUP85N03-04P-E3客戶還搜索了

    • 參考圖片
    • 制造商 / 說明 / 型號 / 倉庫庫存編號
    • PDF
    • 操作

    SUP85N03-04P-E3相關(guān)搜索

    Brand/Series SUP Series  Siliconix / Vishay Brand/Series SUP Series  MOSFET Transistors Brand/Series SUP Series  Siliconix / Vishay MOSFET Transistors Brand/Series SUP Series   Capacitance, Input 4500 pF @ 25 V  Siliconix / Vishay Capacitance, Input 4500 pF @ 25 V  MOSFET Transistors Capacitance, Input 4500 pF @ 25 V  Siliconix / Vishay MOSFET Transistors Capacitance, Input 4500 pF @ 25 V   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N  Siliconix / Vishay Channel Type N  MOSFET Transistors Channel Type N  Siliconix / Vishay MOSFET Transistors Channel Type N   Configuration Single  Siliconix / Vishay Configuration Single  MOSFET Transistors Configuration Single  Siliconix / Vishay MOSFET Transistors Configuration Single   Current, Drain 85 A  Siliconix / Vishay Current, Drain 85 A  MOSFET Transistors Current, Drain 85 A  Siliconix / Vishay MOSFET Transistors Current, Drain 85 A   Dimensions 10.51 x 4.65 x 15.49 mm  Siliconix / Vishay Dimensions 10.51 x 4.65 x 15.49 mm  MOSFET Transistors Dimensions 10.51 x 4.65 x 15.49 mm  Siliconix / Vishay MOSFET Transistors Dimensions 10.51 x 4.65 x 15.49 mm   Fall Time 35 ns  Siliconix / Vishay Fall Time 35 ns  MOSFET Transistors Fall Time 35 ns  Siliconix / Vishay MOSFET Transistors Fall Time 35 ns   Gate Charge, Total 90 nC  Siliconix / Vishay Gate Charge, Total 90 nC  MOSFET Transistors Gate Charge, Total 90 nC  Siliconix / Vishay MOSFET Transistors Gate Charge, Total 90 nC   Height 0.61" (15.49mm)  Siliconix / Vishay Height 0.61" (15.49mm)  MOSFET Transistors Height 0.61" (15.49mm)  Siliconix / Vishay MOSFET Transistors Height 0.61" (15.49mm)   Length 0.413" (10.51mm)  Siliconix / Vishay Length 0.413" (10.51mm)  MOSFET Transistors Length 0.413" (10.51mm)  Siliconix / Vishay MOSFET Transistors Length 0.413" (10.51mm)   Mounting Type Through Hole  Siliconix / Vishay Mounting Type Through Hole  MOSFET Transistors Mounting Type Through Hole  Siliconix / Vishay MOSFET Transistors Mounting Type Through Hole   Number of Elements per Chip 1  Siliconix / Vishay Number of Elements per Chip 1  MOSFET Transistors Number of Elements per Chip 1  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 1   Number of Pins 3  Siliconix / Vishay Number of Pins 3  MOSFET Transistors Number of Pins 3  Siliconix / Vishay MOSFET Transistors Number of Pins 3   Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay Operating and Storage Temperature –55 to +175 °C  MOSFET Transistors Operating and Storage Temperature –55 to +175 °C  Siliconix / Vishay MOSFET Transistors Operating and Storage Temperature –55 to +175 °C   Package Type TO-220AB  Siliconix / Vishay Package Type TO-220AB  MOSFET Transistors Package Type TO-220AB  Siliconix / Vishay MOSFET Transistors Package Type TO-220AB   Polarization N-Channel  Siliconix / Vishay Polarization N-Channel  MOSFET Transistors Polarization N-Channel  Siliconix / Vishay MOSFET Transistors Polarization N-Channel   Power Dissipation 166 W  Siliconix / Vishay Power Dissipation 166 W  MOSFET Transistors Power Dissipation 166 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 166 W   Resistance, Drain to Source On 0.008 Ω  Siliconix / Vishay Resistance, Drain to Source On 0.008 Ω  MOSFET Transistors Resistance, Drain to Source On 0.008 Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.008 Ω   Resistance, Thermal, Junction to Case 0.9 °C/W  Siliconix / Vishay Resistance, Thermal, Junction to Case 0.9 °C/W  MOSFET Transistors Resistance, Thermal, Junction to Case 0.9 °C/W  Siliconix / Vishay MOSFET Transistors Resistance, Thermal, Junction to Case 0.9 °C/W   Temperature, Operating, Maximum +175 °C  Siliconix / Vishay Temperature, Operating, Maximum +175 °C  MOSFET Transistors Temperature, Operating, Maximum +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +175 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +175 °C  MOSFET Transistors Temperature, Operating, Range -55 to +175 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +175 °C   Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay Thermal Resistance, Junction to Ambient 40 °C/W  MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W  Siliconix / Vishay MOSFET Transistors Thermal Resistance, Junction to Ambient 40 °C/W   Time, Turn-Off Delay 50 ns  Siliconix / Vishay Time, Turn-Off Delay 50 ns  MOSFET Transistors Time, Turn-Off Delay 50 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 50 ns   Time, Turn-On Delay 15 ns  Siliconix / Vishay Time, Turn-On Delay 15 ns  MOSFET Transistors Time, Turn-On Delay 15 ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 15 ns   Transconductance, Forward 30 S  Siliconix / Vishay Transconductance, Forward 30 S  MOSFET Transistors Transconductance, Forward 30 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 30 S   Typical Gate Charge @ Vgs 71 nC @ 10 V  Siliconix / Vishay Typical Gate Charge @ Vgs 71 nC @ 10 V  MOSFET Transistors Typical Gate Charge @ Vgs 71 nC @ 10 V  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 71 nC @ 10 V   Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay Voltage, Breakdown, Drain to Source 30 V  MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Breakdown, Drain to Source 30 V   Voltage, Drain to Source 30 V  Siliconix / Vishay Voltage, Drain to Source 30 V  MOSFET Transistors Voltage, Drain to Source 30 V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source 30 V   Voltage, Forward, Diode 1.5 V  Siliconix / Vishay Voltage, Forward, Diode 1.5 V  MOSFET Transistors Voltage, Forward, Diode 1.5 V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode 1.5 V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.183" (4.65mm)  Siliconix / Vishay Width 0.183" (4.65mm)  MOSFET Transistors Width 0.183" (4.65mm)  Siliconix / Vishay MOSFET Transistors Width 0.183" (4.65mm)  
    参考价格及参考库存
      美国2号仓库    仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货
    型号 制造商 描述 操作
    SUP85N03-04P-E3
    [更多]    		 Vishay Intertechnologies

    MOSFET 30V 85A 166W

    RoHS: Compliant

    		搜索
    SUP85N03-04P
    [更多]    		 Vishay Intertechnologies

    MOSFET 30V 85A 166W

    RoHS: Not compliant

    		搜索
      英国2号仓库    仓库直销，订单金额100元起订，满300元含运，满500元含税运，有单就有优惠，量大更优惠，支持原厂订货
    型号 制造商 描述 操作
    SUP85N03-04P-E3
    [更多]    		 Vishay Siliconix

    MOSFET, Power, N-Ch, VDSS 30V, RDS(ON) 0.0035Ohm, ID 85A, TO-220AB, PD 166W, VGS +/-20V

    RoHS: Compliant

    		搜索
    查看资料
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    QQ:800152669
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