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SI6544BDQ-T1-GE3 - 

MOSFET, N/P-Ch, Vds 30V, Vgs +/- 20V, Rds(on) 25mohm, Id 2.7A, TSSOP-8, Pd 0.83W

Siliconix / Vishay SI6544BDQ-T1-GE3
聲明：圖片僅供參考，請以實物為準！
制造商產品編號：
SI6544BDQ-T1-GE3
倉庫庫存編號：
70026451
技術數據表：
View SI6544BDQ-T1-GE3 Datasheet Datasheet
訂購熱線： 400-900-3095  0755-21000796, QQ:800152669, Email:sales@szcwdz.com
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SI6544BDQ-T1-GE3產品概述

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers

    • SI6544BDQ-T1-GE3產品信息

      Brand/Series  SI65 Series  
      Channel Mode  Enhancement  
      Channel Type  N, P  
      Configuration  Dual Drain, Dual Gate, Quad  
      Current, Drain  -2.6 (P), 3.7 (N) A  
      Dimensions  3.1 x 4.5 x 1.05 mm  
      Height  0.041" (1.05mm)  
      Length  0.122" (3.1mm)  
      Mounting Type  Surface Mount  
      Number of Elements per Chip  2  
      Number of Pins  8  
      Package Type  TSSOP-8  
      Power Dissipation  0.83 W  
      Resistance, Drain to Source On  0.046 (N), 0.073 (P) Ω  
      Temperature, Operating, Maximum  +150 °C  
      Temperature, Operating, Minimum  -55 °C  
      Temperature, Operating, Range  -55 to +150 °C  
      Time, Turn-Off Delay  30 (N), 40 (P) ns  
      Time, Turn-On Delay  13 (N), 14 (P) ns  
      Transconductance, Forward  11 S  
      Typical Gate Charge @ Vgs  16 nC @ -10 V (P-Channel), 9.5 nC @ 10 V (N-Channel)  
      Voltage, Drain to Source  -30 (P), 30 (N) V  
      Voltage, Forward, Diode  -1.1 (P), 1.1 (N) V  
      Voltage, Gate to Source  ±20 V  
      Width  0.177" (4.5mm)  
    關鍵詞         

    SI6544BDQ-T1-GE3相關搜索

    Brand/Series SI65 Series  Siliconix / Vishay Brand/Series SI65 Series  MOSFET Transistors Brand/Series SI65 Series  Siliconix / Vishay MOSFET Transistors Brand/Series SI65 Series   Channel Mode Enhancement  Siliconix / Vishay Channel Mode Enhancement  MOSFET Transistors Channel Mode Enhancement  Siliconix / Vishay MOSFET Transistors Channel Mode Enhancement   Channel Type N, P  Siliconix / Vishay Channel Type N, P  MOSFET Transistors Channel Type N, P  Siliconix / Vishay MOSFET Transistors Channel Type N, P   Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay Configuration Dual Drain, Dual Gate, Quad  MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad  Siliconix / Vishay MOSFET Transistors Configuration Dual Drain, Dual Gate, Quad   Current, Drain -2.6 (P), 3.7 (N) A  Siliconix / Vishay Current, Drain -2.6 (P), 3.7 (N) A  MOSFET Transistors Current, Drain -2.6 (P), 3.7 (N) A  Siliconix / Vishay MOSFET Transistors Current, Drain -2.6 (P), 3.7 (N) A   Dimensions 3.1 x 4.5 x 1.05 mm  Siliconix / Vishay Dimensions 3.1 x 4.5 x 1.05 mm  MOSFET Transistors Dimensions 3.1 x 4.5 x 1.05 mm  Siliconix / Vishay MOSFET Transistors Dimensions 3.1 x 4.5 x 1.05 mm   Height 0.041" (1.05mm)  Siliconix / Vishay Height 0.041" (1.05mm)  MOSFET Transistors Height 0.041" (1.05mm)  Siliconix / Vishay MOSFET Transistors Height 0.041" (1.05mm)   Length 0.122" (3.1mm)  Siliconix / Vishay Length 0.122" (3.1mm)  MOSFET Transistors Length 0.122" (3.1mm)  Siliconix / Vishay MOSFET Transistors Length 0.122" (3.1mm)   Mounting Type Surface Mount  Siliconix / Vishay Mounting Type Surface Mount  MOSFET Transistors Mounting Type Surface Mount  Siliconix / Vishay MOSFET Transistors Mounting Type Surface Mount   Number of Elements per Chip 2  Siliconix / Vishay Number of Elements per Chip 2  MOSFET Transistors Number of Elements per Chip 2  Siliconix / Vishay MOSFET Transistors Number of Elements per Chip 2   Number of Pins 8  Siliconix / Vishay Number of Pins 8  MOSFET Transistors Number of Pins 8  Siliconix / Vishay MOSFET Transistors Number of Pins 8   Package Type TSSOP-8  Siliconix / Vishay Package Type TSSOP-8  MOSFET Transistors Package Type TSSOP-8  Siliconix / Vishay MOSFET Transistors Package Type TSSOP-8   Power Dissipation 0.83 W  Siliconix / Vishay Power Dissipation 0.83 W  MOSFET Transistors Power Dissipation 0.83 W  Siliconix / Vishay MOSFET Transistors Power Dissipation 0.83 W   Resistance, Drain to Source On 0.046 (N), 0.073 (P) Ω  Siliconix / Vishay Resistance, Drain to Source On 0.046 (N), 0.073 (P) Ω  MOSFET Transistors Resistance, Drain to Source On 0.046 (N), 0.073 (P) Ω  Siliconix / Vishay MOSFET Transistors Resistance, Drain to Source On 0.046 (N), 0.073 (P) Ω   Temperature, Operating, Maximum +150 °C  Siliconix / Vishay Temperature, Operating, Maximum +150 °C  MOSFET Transistors Temperature, Operating, Maximum +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Maximum +150 °C   Temperature, Operating, Minimum -55 °C  Siliconix / Vishay Temperature, Operating, Minimum -55 °C  MOSFET Transistors Temperature, Operating, Minimum -55 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Minimum -55 °C   Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay Temperature, Operating, Range -55 to +150 °C  MOSFET Transistors Temperature, Operating, Range -55 to +150 °C  Siliconix / Vishay MOSFET Transistors Temperature, Operating, Range -55 to +150 °C   Time, Turn-Off Delay 30 (N), 40 (P) ns  Siliconix / Vishay Time, Turn-Off Delay 30 (N), 40 (P) ns  MOSFET Transistors Time, Turn-Off Delay 30 (N), 40 (P) ns  Siliconix / Vishay MOSFET Transistors Time, Turn-Off Delay 30 (N), 40 (P) ns   Time, Turn-On Delay 13 (N), 14 (P) ns  Siliconix / Vishay Time, Turn-On Delay 13 (N), 14 (P) ns  MOSFET Transistors Time, Turn-On Delay 13 (N), 14 (P) ns  Siliconix / Vishay MOSFET Transistors Time, Turn-On Delay 13 (N), 14 (P) ns   Transconductance, Forward 11 S  Siliconix / Vishay Transconductance, Forward 11 S  MOSFET Transistors Transconductance, Forward 11 S  Siliconix / Vishay MOSFET Transistors Transconductance, Forward 11 S   Typical Gate Charge @ Vgs 16 nC @ -10 V (P-Channel), 9.5 nC @ 10 V (N-Channel)  Siliconix / Vishay Typical Gate Charge @ Vgs 16 nC @ -10 V (P-Channel), 9.5 nC @ 10 V (N-Channel)  MOSFET Transistors Typical Gate Charge @ Vgs 16 nC @ -10 V (P-Channel), 9.5 nC @ 10 V (N-Channel)  Siliconix / Vishay MOSFET Transistors Typical Gate Charge @ Vgs 16 nC @ -10 V (P-Channel), 9.5 nC @ 10 V (N-Channel)   Voltage, Drain to Source -30 (P), 30 (N) V  Siliconix / Vishay Voltage, Drain to Source -30 (P), 30 (N) V  MOSFET Transistors Voltage, Drain to Source -30 (P), 30 (N) V  Siliconix / Vishay MOSFET Transistors Voltage, Drain to Source -30 (P), 30 (N) V   Voltage, Forward, Diode -1.1 (P), 1.1 (N) V  Siliconix / Vishay Voltage, Forward, Diode -1.1 (P), 1.1 (N) V  MOSFET Transistors Voltage, Forward, Diode -1.1 (P), 1.1 (N) V  Siliconix / Vishay MOSFET Transistors Voltage, Forward, Diode -1.1 (P), 1.1 (N) V   Voltage, Gate to Source ±20 V  Siliconix / Vishay Voltage, Gate to Source ±20 V  MOSFET Transistors Voltage, Gate to Source ±20 V  Siliconix / Vishay MOSFET Transistors Voltage, Gate to Source ±20 V   Width 0.177" (4.5mm)  Siliconix / Vishay Width 0.177" (4.5mm)  MOSFET Transistors Width 0.177" (4.5mm)  Siliconix / Vishay MOSFET Transistors Width 0.177" (4.5mm)  
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